@Aladdin A $p$-type dopant has an outer electron state just above the valence band so an electron in the valence band can jump up to it leaving behind a hole.
Again the negative acceptor dopant ion can't move, but the hole can. So $p$-type doping produces lots of mobile holes.
A typical $p$-type dopant would be boron with 3 electrons in its outer shell. It accepts a fourth electron so it can form four bonds just like the silicon atoms around it.
If you start with pure silicon and add a $p$-type dopant like boron then it creates holes in the valence band and negative B- ions in the band gap just above the valence band.
Problem Solving Strategies
Problem Solving Strategies